Transport measurements on MOVPE-grown InN films

نویسندگان

  • Shang-Chia Chen
  • Shih-Kai Lin
  • Kun-Ta Wu
  • Chao-Ping Huang
  • Pen-Hsiu Chang
  • N. C. Chen
  • Chin-An Chang
  • Hsian-Chu Peng
  • Chuang-Feng Shih
  • Kuo-Shung Liu
چکیده

Pen-Hsiu Chang , N.C. Chen, Chin-An Chang1, Hsian-Chu Peng, Chuang-Feng Shih, KuoShung Liu, Shih-Kai Lin, Kun-Ta Wu, Shang-Chia Chen, Chao-Ping Huang, Hong-Syuan Wang, Pu-Tai Yang, C.-T. Liang, Y.H. Chang and Y.F. Chen Institute of Electro-Optical Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan Department of Physics, National Taiwan University, Taipei 106, Taiwan

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Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE

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عنوان ژورنال:
  • Microelectronics Journal

دوره 36  شماره 

صفحات  -

تاریخ انتشار 2005