Transport measurements on MOVPE-grown InN films
نویسندگان
چکیده
Pen-Hsiu Chang , N.C. Chen, Chin-An Chang1, Hsian-Chu Peng, Chuang-Feng Shih, KuoShung Liu, Shih-Kai Lin, Kun-Ta Wu, Shang-Chia Chen, Chao-Ping Huang, Hong-Syuan Wang, Pu-Tai Yang, C.-T. Liang, Y.H. Chang and Y.F. Chen Institute of Electro-Optical Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan Department of Physics, National Taiwan University, Taipei 106, Taiwan
منابع مشابه
Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE
In this study, we report on the pulsed metalorganic vapor phase epitaxy (MOVPE) of InN as well as the optical and electronic properties of the films as a function of V/III ratio and growth temperatures. The growth of InN films was conducted utilizing a vertical reactor with TMIn and NH3 as the Inand Nprecursors, respectively. Metallic droplet-free InN films were achieved on GaN/sapphire templat...
متن کاملElectrical and optical properties of MOVPE InN doped with Mg using CP2Mg
The first trial of Mg-doping in the atmospheric-pressure MOVPE growth of InN has been made using CP2Mg as a Mg source. Although Mg is incorporated in the InN films and its content is proportional to CP2Mg/TMI molar ratio, all samples grown here show n-type conduction and the electron concentration is rather increased with increasing CP2Mg/TMI molar ratio. The SIMS analysis reveals that C and H ...
متن کاملComparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques
We make a comparative study of the luminescent properties of InGaP films grown on GaAs substrates by two different growth techniques: liquid phase epitaxy (LPE) and metal-organic vapor phase epitaxy (MOVPE). The grown InxGa1KxP (xz0.5) films were nearly lattice matched to GaAs and had the same thickness of approximately 0.5 mm. Photoluminescence (PL) measurements were performed in a wide temper...
متن کاملEvaluation of threading dislocation densities in In- and N-face InN
The threading dislocation TD structure and density has been studied in Inand N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by nondestructive x-ray diffraction rocking curve measurements in on-axis symmetric and off-axis skew symmetric geometries and calibrated by transmission electron microscopy measurements. TD densities were dominate...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Microelectronics Journal
دوره 36 شماره
صفحات -
تاریخ انتشار 2005